Volume 3, Issue 1 (4-1995)                   www.ijcm.ir 1995, 3(1): 57-64 | Back to browse issues page

XML Persian Abstract Print


Download citation:
BibTeX | RIS | EndNote | Medlars | ProCite | Reference Manager | RefWorks
Send citation to:

Creeping up in Growth of Crystal from Solution. www.ijcm.ir 1995; 3 (1) :57-64
URL: http://ijcm.ir/article-1-923-en.html
Abstract:   (2397 Views)

Single crys tals have been grown rrom ancient Egypt.
Crys tal growth Slall ... u ... I •• ~ • • . 1 " - •• v •• ,
1940 until now. Four melt.odS have been used to prepare single
crys tal s: gr~-rr-onrsOlu tiOn, melt, vapour, and solid. Every
metho~its own advantage, disadva nlagea nd problems. One
of the problems in growth from solution is creeping up.
Creeping up is undesirable growth or thin layer on the wall
of crystal growth bath. Sometimes this layer grows very rapid and
so fills the bath, and prevents growth . In this paper, these
subjects are considered
l. Why does creeping up occure?
2. What parameter affect on it?
3. What in the best way ror its prevention?
Experi ments show that creeping up is arrected by wetting
ang le between solution a nd bath wall, viscosity of solution,
agitation, additives, and shape of bath.

Full-Text [PDF 157 kb]   (651 Downloads)    
Type of Study: Research | Subject: Special

Add your comments about this article : Your username or Email:
CAPTCHA

Rights and permissions
Creative Commons License This work is licensed under a Creative Commons Attribution-NonCommercial 4.0 International License.

© 2024 CC BY-NC 4.0 | Iranian Journal of Crystallography and Mineralogy

Designed & Developed by : Yektaweb