Volume 3, Issue 1 (4-1995)
www.ijcm.ir 1995, 3(1): 3-14 |
Back to browse issues page
Download citation:
BibTeX | RIS | EndNote | Medlars | ProCite | Reference Manager | RefWorks
Send citation to:
BibTeX | RIS | EndNote | Medlars | ProCite | Reference Manager | RefWorks
Send citation to:
Characterization and Fabrication of Multilayers
of A1xGal_xAs/GaAs by Epitaxy. www.ijcm.ir 1995; 3 (1) :3-14
URL: http://ijcm.ir/article-1-917-en.html
URL: http://ijcm.ir/article-1-917-en.html
Abstract: (2721 Views)
Five layers of GaAs:Te(n=2x 1018 cm' Alo.4GaQ.6As:
Sn(n=5xWI6 em,3}. GaAs, Alo .• GaQ.6As: Ge(p=3xW17 em-3),
GaM: GC(p= IXlO18cm 3) were grown by supercooled Liquid
Phase Epilaxy on n-GaAs(IOO) substrate. The cooling rate of the
furnace was SCI up With U. I"C/min al T=860°C. The firSI layer
was grown at T=840°C and Ihe la sl one at T=827°C. The
thi ckness were varied between 0.1 10 8,um by controlling the
supercooling IcmperalUre and growth time. Quality and quantilY
of epitaxial layers were examined by TEM, SEM, PIXE and x-ray,
| Rights and permissions | |
 |
This work is licensed under a Creative Commons Attribution-NonCommercial 4.0 International License. |
