Volume 3, Issue 1 (4-1995)                   www.ijcm.ir 1995, 3(1): 3-14 | Back to browse issues page

XML Persian Abstract Print

Download citation:
BibTeX | RIS | EndNote | Medlars | ProCite | Reference Manager | RefWorks
Send citation to:

Characterization and Fabrication of Multilayers of A1xGal_xAs/GaAs by Epitaxy. www.ijcm.ir. 1995; 3 (1) :3-14
URL: http://ijcm.ir/article-1-917-en.html
Abstract:   (1922 Views)

Five layers of GaAs:Te(n=2x 1018 cm' Alo.4GaQ.6As:
Sn(n=5xWI6 em,3}. GaAs, Alo .• GaQ.6As: Ge(p=3xW17 em-3),
GaM: GC(p= IXlO18cm 3) were grown by supercooled Liquid
Phase Epilaxy on n-GaAs(IOO) substrate. The cooling rate of the
furnace was SCI up With U. I"C/min al T=860°C. The firSI layer
was grown at T=840°C and Ihe la sl one at T=827°C. The
thi ckness were varied between 0.1 10 8,um by controlling the
supercooling IcmperalUre and growth time. Quality and quantilY
of epitaxial layers were examined by TEM, SEM, PIXE and x-ray,

Full-Text [PDF 124 kb]   (560 Downloads)    
Type of Study: Research | Subject: Special

Add your comments about this article : Your username or Email:

Rights and permissions
Creative Commons License This work is licensed under a Creative Commons Attribution-NonCommercial 4.0 International License.

© 2021 CC BY-NC 4.0 | Iranian Journal of Crystallography and Mineralogy

Designed & Developed by : Yektaweb