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Zare Asl H, Rozati S M. Spray-deposited fluorine doped tin oxide thin films with high figure of merit: the influence of doping concentration on the physical characteristics. www.ijcm.ir 2025; 33 (1) :169-180
URL: http://ijcm.ir/article-1-1908-en.html
URL: http://ijcm.ir/article-1-1908-en.html
1- Department of Physics, Behbahan Khatam Alanbia University of Technology, Behbahan, Iran
2- Department of Physics, University of Guilan, Rasht, Iran
2- Department of Physics, University of Guilan, Rasht, Iran
Abstract: (512 Views)
Fluorine (F)-doped tin oxide (FTO) thin films were spray-deposited onto soda lime glass substrate. The F doping concentration ([F]/[F]+[Sn] atomic ratio) varied from 0, 20, 30, and 40 at.% in the precursor solution. Due to the presence of the F in the SnO2 structure, the thin films texture was changed which was found to be in favor of mobility improvement. The mobility enhancement along with the carrier concentration raise, which result from substitution of O2- with F- that led to significant conductivity promotion in the doped thin films. Moreover, F doping caused transparency improvement and shift in the absorption edge towards lower wavelength in the prepared FTO thin films. Consequently, the FTO film derived from 30 at.% doping reached a resistivity, sheet resistance, and average transmittance of 2.08×10-1 Ω.cm, 16 Ω/sq, and 87.47%, respectively. The mentioned values provided a 1.65×10-2 Ω-1 of figure of merit for the FTO thin film.
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