دوره 29، شماره 4 - ( 10-1400 )                   جلد 29 شماره 4 صفحات 932-919 | برگشت به فهرست نسخه ها


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Asadpour Arzefooni, Izadifard, Ghazi, Arab Pour. Study of Structural, Optical and Electrical Properties of MA(FA)SnICl2 Perovskite Thin Films Synthesized by One-Step Spin Coating. www.ijcm.ir. 2021; 29 (4) :919-932
URL: http://ijcm.ir/article-1-1691-fa.html
اسدپور ارزفونی عالمه، ایزدی فرد مرتضی، ابراهیم قاضی محمد، عرب‌پور فرزانه. بررسی ویژگی‌های ساختاری و نوری و الکتریکی لایه‌های نازک پروسکایتی C‌H3NH3SnICl2 و CH(NH2)2SnICl2 سنتز شده به روش پوشش‌دهی چرخشی تک‌مرحله‌ای. مجله بلورشناسی و کانی شناسی ایران. 1400; 29 (4) :932-919

URL: http://ijcm.ir/article-1-1691-fa.html


1- دانشگاه صنعتی شاهرود
2- دانشگاه تربیت مدرس
چکیده:   (369 مشاهده)
لایه­های نازک پروسکایتی  CH3NH3SnICl2 (MASnICl2)  و  CH(NH2)2SnICl2 (FASnICl2)  به روش پوشش­دهی­چرخشی­تک مرحله­ای بر زیر لایه­های شیشه­ای نهشته شدند و ویژگی­های ساختاری ، نوری و الکتریکی آنها بررسی گردید. مشخصه یابی ساختاری این لایه­ها نشان داد که همه آنها دارای ساختار چارگوشی پروسکایت (فاز هستند و با تغییر کاتیون­های آلی CH(NH2)2I ((FAI وCH3NH3I  (MAI)کیفیت بلورینگی و ریخت سطح نمونه­ها به طور محسوسی تغییر می­کنند. اثر این تغییرات بر ویژگی­های الکتریکی و نوری لایه­ها نیز دیده شد. لایه­های پروسکایتی تهیه شده دارای ضریب جذب بالایی (از مرتبه cm-1105) در ناحیه مرئی بودند. گاف انرژی لایه­ها محاسبه شده براساس رابطه تائوک برای لایه FASnICl2 برابر با eV 48/1 و برای لایه  MASnICl2 برابر باeV  54/1 است. در طیف نورتابی (PL) هر دو لایه پروسکایتی در دمای اتاق یک قله به نسبت شدید نزدیک گاف انرژی لایه­ها دیده شد که شدت آن در لایه FASnICl2 به طور قابل توجهی بیشتر از لایه MASnICl2 بود. نتایج نشان داد که لایه پروسکایتی FASnICl2 سنتز شده دارای ساختار بلورین بهتر، مقاومت الکتریکی کمتر، حساسیت و پاسخ نوری مناسب­تر در مقایسه با لایه MASnICl2 است و می­تواند گزینه­ مناسبی برای استفاده به عنوان لایه جاذب در سلول­های خورشیدی باشد.      
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نوع مقاله: پژوهشي | موضوع مقاله: تخصصي

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