%0 Journal Article %T Characterization and Fabrication of Multilayersof A1xGal_xAs/GaAs by Epitaxy %J Iranian Journal of Crystallography and Mineralogy %V 3 %N 1 %U http://ijcm.ir/article-1-917-fa.html %R %D 1995 %K Liqlll'd Phase Epitaxy, supercooled Liquid, substrate, %X Five layers of GaAs:Te(n=2x 1018 cm' Alo.4GaQ.6As: Sn(n=5xWI6 em,3}. GaAs, Alo .• GaQ.6As: Ge(p=3xW17 em-3), GaM: GC(p= IXlO18cm 3) were grown by supercooled Liquid Phase Epilaxy on n-GaAs(IOO) substrate. The cooling rate of the furnace was SCI up With U. I"C/min al T=860°C. The firSI layer was grown at T=840°C and Ihe la sl one at T=827°C. The thi ckness were varied between 0.1 10 8,um by controlling the supercooling IcmperalUre and growth time. Quality and quantilY of epitaxial layers were examined by TEM, SEM, PIXE and x-ray, %> http://ijcm.ir/article-1-917-fa.pdf %P 3-14 %& 3 %! %9 Research %L A-10-44-184 %+ %G eng %@ 1726-3689 %[ 1995