Si ng le c rys t als o f bin a ry semico ndu c to rs
CdTc,CdSe. PhTe and PbSe were grown by sublimat ion and
condensa tion techniq ues usi ng argon as the carri e r gas.
Powder X-ray di ffractomet ry as wel l as La ue mClhod wcre
employed fo r the stru ct ura l a na lysis. By usi ng Ha ll
techniq ue. the de nsity and polarity of charge car rie rs we re
de te rmined in single crysta ls. PbTc and PbSc c rys ta ls were
grown as p-type wit h charge densi ty of about l.l x1Q 18 em·3
whereas CdTc and CdSe were grown as intrinsic. Thcrmo *
elcctric technique was also uliliscd to dc le rmine the e nergy
gap of single and polycrystals of CdTc and CdSc.