دوره 29، شماره 4 - ( 10-1400 )
جلد 29 شماره 4 صفحات 932-919 |
برگشت به فهرست نسخه ها
1- دانشگاه صنعتی شاهرود
2- دانشگاه تربیت مدرس
2- دانشگاه تربیت مدرس
چکیده: (1085 مشاهده)
لایههای نازک پروسکایتی CH3NH3SnICl2 (MASnICl2) و CH(NH2)2SnICl2 (FASnICl2) به روش پوششدهیچرخشیتک مرحلهای بر زیر لایههای شیشهای نهشته شدند و ویژگیهای ساختاری ، نوری و الکتریکی آنها بررسی گردید. مشخصه یابی ساختاری این لایهها نشان داد که همه آنها دارای ساختار چارگوشی پروسکایت (فاز (α هستند و با تغییر کاتیونهای آلی CH(NH2)2I ((FAI وCH3NH3I (MAI)کیفیت بلورینگی و ریخت سطح نمونهها به طور محسوسی تغییر میکنند. اثر این تغییرات بر ویژگیهای الکتریکی و نوری لایهها نیز دیده شد. لایههای پروسکایتی تهیه شده دارای ضریب جذب بالایی (از مرتبه cm-1105) در ناحیه مرئی بودند. گاف انرژی لایهها محاسبه شده براساس رابطه تائوک برای لایه FASnICl2 برابر با eV 48/1 و برای لایه MASnICl2 برابر باeV 54/1 است. در طیف نورتابی (PL) هر دو لایه پروسکایتی در دمای اتاق یک قله به نسبت شدید نزدیک گاف انرژی لایهها دیده شد که شدت آن در لایه FASnICl2 به طور قابل توجهی بیشتر از لایه MASnICl2 بود. نتایج نشان داد که لایه پروسکایتی FASnICl2 سنتز شده دارای ساختار بلورین بهتر، مقاومت الکتریکی کمتر، حساسیت و پاسخ نوری مناسبتر در مقایسه با لایه MASnICl2 است و میتواند گزینه مناسبی برای استفاده به عنوان لایه جاذب در سلولهای خورشیدی باشد.
واژه‌های کلیدی: لایههای جاذب پروسکایتی، روش پوشش‌دهی چرخشی تک مرحلهای، ویژگیهای ساختاری، ویژگیهای نوری، پاسخ نوری، CH3NH3SnICl2، CH(NH2)2SnICl2.
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