Advanced diode laser consists of a two dimensional thin layer
which is about 10 nanometers size. Optical gain of thin layers has a great
deal of importance in light amplification. Thin layers cause a modification in
conduction and valance bands of bulk materials. · Subbands have been
computed through effective mass equations. As a result of this method,
particular effective masses are available. These specific equations are
formed by numerical methods .Studied structure in this research includes a
two dimensional thin layer of GaAs with a quantum well width from 7.5 to
8.5 nanometers, cladded by two layers of AIGaAs which has a larger band
gap. Aluminum percentage has been chosen 15 to 45 percent. Results from
this study demonstrates that quantum well width should be adjusted
according to Aluminum percentage, and the final optimized resu lt, based on
the developed optical gain model, is a thin layer of 8.5 nanometers width
cladded by a 25 percent of aluminum in AIGaAs materials.