Volume 10, Issue 2 (10-2002)                   www.ijcm.ir 2002, 10(2): 107-116 | Back to browse issues page

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Decreasing Sintering Temprature of PZT Ceramic for Improving Multilayers Devices. www.ijcm.ir 2002; 10 (2) :107-116
URL: http://ijcm.ir/article-1-780-en.html
Abstract:   (2566 Views)

In this research, the decrease of sintering temprature of piezoelectric ceramic PZT, P(Zr0.53Ti0.47)O3 was investigated by adding different percent of NiO impurity to the initial materials and then calcined at 1000ºC. X-ray diffraction results from different samples proved the formation of two phases including tetragonal and rembohedral structure. In addition, formation of a new cubic phase of NiO between grains was approved. Then samples were sintered at 1100ºC and electrical and piezoelectrical experiments were done on them. Microstructure of samples was investigated by SEM. The results of SEM showed that samples with 10 percent impurity have maximum size of grain and porosity.

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Type of Study: Research | Subject: Special

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