TY - JOUR JF - ijcmir JO - www.ijcm.ir VL - 3 IS - 1 PY - 1995 Y1 - 1995/4/01 TI - Characterization and Fabrication of Multilayersof A1xGal_xAs/GaAs by Epitaxy TT - رشد براراستی لایه های GaAs/AlxGa1-xAs و بررسی مشخصات آنها N2 - Five layers of GaAs:Te(n=2x 1018 cm' Alo.4GaQ.6As: Sn(n=5xWI6 em,3}. GaAs, Alo .• GaQ.6As: Ge(p=3xW17 em-3), GaM: GC(p= IXlO18cm 3) were grown by supercooled Liquid Phase Epilaxy on n-GaAs(IOO) substrate. The cooling rate of the furnace was SCI up With U. I"C/min al T=860°C. The firSI layer was grown at T=840°C and Ihe la sl one at T=827°C. The thi ckness were varied between 0.1 10 8,um by controlling the supercooling IcmperalUre and growth time. Quality and quantilY of epitaxial layers were examined by TEM, SEM, PIXE and x-ray, SP - 3 EP - 14 AD - KW - Liqlll'd Phase Epitaxy KW - supercooled Liquid KW - substrate UR - http://ijcm.ir/article-1-917-en.html ER -