دوره 31، شماره 4 - ( 10-1402 )
جلد 31 شماره 4 صفحات 794-785 |
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Ataei M, Fadavieslam M R F. The effect of substrate temperature on the preparation of molybdenum oxide thin films by spray pyrolysis method used in diode. www.ijcm.ir 2023; 31 (4) :785-794
URL: http://ijcm.ir/article-1-1798-fa.html
URL: http://ijcm.ir/article-1-1798-fa.html
عطایی مجتبی، فدوی اسلام محمد رضا. اثر دمای بستر بر لایههای نازک اکسید مولیبدن تهیه شده به روش افشانه گرمایی در دیود. مجله بلورشناسی و کانی شناسی ایران. 1402; 31 (4) :785-794
1- دانشکده فیزیک، دانشگاه دامغان، دامغان، ایران
چکیده: (307 مشاهده)
در این پژوهش، دیودها با لایه نشانی لایه نازک اکسید مولیبدن بر بستر سیلیکون آلایش شده نوع p با هدف بررسی اثر دمای بستر بر ویژگی دیود ساخته شدند. به این منظور، لایههای نازک اکسید مولیبدن در بسترهای با دمای 350، 400، 450 و oC 500 به روش افشانه گرمایی لایهنشانی شدند. ویژگیهای ساختاری و نوری لایههای نازک بررسی گردید. آنها ماهیتی بسبلوری با ساختار راستگوشی و قلههای پراشی مربوط به صفحههای (020)، (040) و (060) را نشان میدهند که قله ارجح در همه نمونهها (040) است. ریختار سطح نمونهها بدون ترک و دارای دانهبندی مستطیل شکل با اندازه دانههای در گستره 110 تا 210 نانومتر است. همچنین زبری متوسط سطح آنها در گستره 157 تا 167 نانومتر اندازهگیری شد. گاف نوری نمونهها در گستره 84/2 تا eV 95/2 برآورد شد. نمودار ولتاژ – جریان نمونهها رفتار دیودی آنها را نشان داد. دیود ساخته شده در دمای بستر oC400 دارای کمترین ولتاژ آستانه است.
واژه‌های کلیدی: اکسید مولیبدن، لایه نازک، افشانه گرمایی، دیود.
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